bc 856 ... bc 860 1 sep-28-1999 pnp silicon af transistors ? for af input stages and driver applications ? high current gain ? low collector-emitter saturation voltage ? low noise between 30 hz and 15 khz ? complementary types: bc 846, bc 847, bc 848 bc 849, bc 850 (npn) 1 2 3 vps05161 type marking pin configuration package bc 856a bc 856b bc 857a bc 857b bc 857c bc 858a bc 858b bc 858c bc 859a bc 859b bc 859c bc 860b bc 860c 3as 3bs 3es 3fs 3gs 3js 3ks 3ls 4as 4bs 4cs 4fs 4gs 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c sot-23 sot-23 sot-23 sot-23 sot-23 sot-23 sot-23 sot-23 sot-23 sot-23 sot-23 sot-23 sot-23
bc 856 ... bc 860 2 sep-28-1999 maximum ratings bc 857 bc 860 bc 858 bc 859 symbol bc 856 parameter unit collector-emitter voltage v ceo 65 45 30 v collector-base voltage v cbo 80 50 30 collector-emitter voltage v ces 50 80 30 emitter-base voltage v ebo 5 5 5 dc collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 peak emitter current 200 i em total power dissipation , t s = 71 c p tot 330 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 310 k/w junction - soldering point r thjs 240 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 bc 856 bc 857/860 bc 858/859 v (br)ceo 65 45 30 - - - - - - v collector-base breakdown voltage i c = 10 a, i b = 0 bc 856 bc 857/860 bc 858/859 v (br)cbo 80 50 30 - - - - - - 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bc 856 ... bc 860 3 sep-28-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values typ. max. min. dc characteristics bc 856 bc 857/860 bc 858/859 v (br)ces 80 50 30 - - - v - - - collector-emitter breakdown voltage i c = 10 a, v be = 0 emitter-base breakdown voltage i e = 1 a, i c = 0 v (br)ebo - - 5 15 collector cutoff current v cb = 30 v, i e = 0 na - - i cbo - 4 collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c i cbo - a - - - 140 250 480 - h fe -group a h fe -group b h fe -group c h fe dc current gain 1) i c = 10 a, v ce = 5 v - - - h fe 125 220 420 250 475 800 dc current gain 1) i c = 2 ma, v ce = 5 v h fe -group a h fe -group b h fe -group c 180 290 520 v cesat - - mv 300 650 collector-emitter saturation voltage1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma 75 250 base-emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma - - - - 700 850 v besat 750 820 base-emitter voltage 1) i c = 2 ma, v ce = 5 v i c = 10 ma, v ce = 5 v v be(on) 650 - 600 - 1) pulse test: t 300 s, d = 2%
bc 856 ... bc 860 4 sep-28-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 20 ma, v ce = 5 v, f = 100 mhz f t - 250 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 3 - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 8 - short-circuit input impedance i c = 2 ma, v ce = 5 v, f = 1 khz h fe -gr. a h fe -gr. b h fe -gr. c h 11e - - - 2.7 4.5 8.7 - - - k ? open-circuit reverse voltage transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz h fe -gr. a h fe -gr. b h fe -gr. c h 12e - - - 1.5 2 3 - - - 10 -4 short-circuit forward current transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz h fe -gr. a h fe -gr. b h fe -gr. c h 21e - - - 200 330 600 - - - - open-circuit output admittance i c = 2 ma, v ce = 5 v, f = 1 khz h fe -gr. a h fe -gr. b h fe -gr. c h 22e - - - 18 30 60 - - - s noise figure i c = 0.2 ma, v ce = 5 v, r s = 1 k ? , f = 1 khz, ? f = 200 hz bc 859 bc 860 f - - - db equivalent noise voltage i c = 200 a, v ce = 5 v, r s = 2 k ? , f = 10 ... 50 hz bc 860 v n - - 0.11 v
bc 856 ... bc 860 5 sep-28-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0 ehp00375 150 50 100 ?c t as t 100 200 300 mw 400 p tot t t ; as collector-base capacitance c cb = f ( v cbo ) emitter-base capacitance c eb = f ( v ebo ) 0 4 10 5 10 10 ehp00376 v cb0 c eb0 v 6 2 eb0 v ebo c 8 10 pf 12 cb0 c -1 0 1 c cbo ( ( ) bc 856...860 ) permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00377 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t transition frequency f t = f ( i c ) v ce = 5v 10 10 10 10 ehp00378 f ma mhz -1 0 1 2 5 t 3 10 10 2 1 10 5 5 5 c
bc 856 ... bc 860 6 sep-28-1999 collector cutoff current i cbo = f ( t a ) v cb = 30v 10 0 50 100 150 ehp00381 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ c collector-emitter saturation voltage i c = f ( v cesat ), h fe = 20 10 0 ehp00380 v cesat 10 ma 10 10 2 1 0 -1 5 5 v 0.3 0.5 100 25 -50 0.1 0.2 0.4 c c c c dc current gain h fe = f ( i c ) v ce = 5v 10 10 10 10 ehp00382 h ma -2 -1 12 fe 3 10 10 2 0 10 5 5 10 1 0 10 5 555 100 25 -50 c c c c base-emitter saturation voltage i c = f (v besat ), h fe = 20 0 10 ehp00379 besat v 0.6 v 1.2 -1 10 0 10 1 2 10 5 5 c ma 0.2 0.4 0.8 c 25 c 100 c -50 c
bc 856 ... bc 860 7 sep-28-1999 h parameter h e = f ( v ce ) normalized i c = 2ma 0 0102030 bc 856...860 ehp00384 v ce h e v 1.0 0.5 1.5 2.0 = 2 ma h 11 12 h h 22 c h parameter h e = f ( i c ) normalized v ce = 5v 10 10 10 bc 856...860 ehp00383 ma -1 0 1 5 e h 2 10 -1 10 1 10 10 0 5 5 5 h 11e h 12e h 21e h 22e v ce = 5 v c noise figure f = f ( v ce ) i c = 0.2ma, r s = 2k ? , f = 1khz 0 10 10 10 10 bc 856...860 ehp00385 v ce f v 10 5 15 db 20 -1012 5 5 noise figure f = f ( f ) i c = 0.2ma, v ce = 5v, r s = 2k ? 10 10 10 10 bc 856...860 ehp00386 f khz db -2 -1 1 2 20 10 0 5 15 f 0 10
bc 856 ... bc 860 8 sep-28-1999 noise figure f = f ( i c ) v ce = 5v, f = 1khz 10 10 10 10 bc 856...860 ehp00388 f ma -3 -2 0 1 20 10 0 5 15 -1 10 = 1 m 100 k 10 k db 500 1 k ?? ? s r ? ? c noise figure f = f ( i c ) v ce = 5v, f = 120hz 10 10 10 10 bc 856...860 ehp00387 f ma -3 -2 0 1 20 10 0 5 15 -1 10 = 1 m 100 k 10 k db 500 1 k ? ?? s r ? ? c noise figure f = f ( i c ) v ce = 5v, f = 10khz 10 10 10 10 bc 856...860 ehp00389 ma -3 -2 0 1 20 10 0 5 15 -1 10 db f c = 1 m r s ? ? 100 k ? 10 k 500 ? ? 1 k
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